Channel geometry-dependent threshold voltage and transconductance degradation in gate-all-around nanosheet junctionless transistors
نویسندگان
چکیده
منابع مشابه
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ژورنال
عنوان ژورنال: AIP Advances
سال: 2021
ISSN: 2158-3226
DOI: 10.1063/5.0035460